SSD30N06-39D n-ch enhancement mode power mosfet 30a, 60v, r ds(on) 38 m ? elektronische bauelemente 30-aug-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. to-252(d-pack) a c d n o p g e f h k j m b rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applicatio ns are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellu lar and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframce dpak saves board space ? fast switching speed ? high performance trench technology product summary product summary v ds (v) r ds (on) m( ?? absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current a i d @t c =25 19 a pulsed drain current b i dm 40 a continuous source current (diode conduction) a i s 30 a power dissipation a p d @t c =25 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient a r ja 50 c / w maximum thermal resist ance junction-case r jc 3.0 c / w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 ? ? gate ? ? source ? ? drain
SSD30N06-39D n-ch enhancement mode power mosfet 30a, 60v, r ds(on) 38 m ? elektronische bauelemente 30-aug-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-source threshold voltage v gs(th) 1.0 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 a v ds = 48v, v gs = 0v - - 25 v ds = 48v, v gs = 0v, t j = 55c on-state drain current a i d(on) 34 - - a v ds = 5v, v gs = 10v drain-source on-resistance a r ds(on) - - 38 m ? v gs = 10v, i d = 30a - - 50 v gs = 4.5v, i d = 26a forward transconductance a g fs - 22 - s v ds = 15v, i d = 30a diode forward voltage v sd - 1.1 - v i s = 24a, v gs = 0v dynamic b total gate charge q g - 12.5 - nc i d = 30 a v ds = 15 v v gs = 4.5 v gate-source charge q gs - 2.4 - gate-drain change q gd - 2.6 - turn-on delay time t d(on) - 11 - ns v dd = 25 v i d = 30 a r l = 25 ? v gen = 10 v rise time t r - 8 - turn-off delay time t d(off) - 19 - fall time t f - 6 - notes a. pulse test pw Q 300 us duty cycle Q 2 . b. guaranteed by design, not subject to production testing.
SSD30N06-39D n-ch enhancement mode power mosfet 30a, 60v, r ds(on) 38 m ? elektronische bauelemente 30-aug-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curves
SSD30N06-39D n-ch enhancement mode power mosfet 30a, 60v, r ds(on) 38 m ? elektronische bauelemente 30-aug-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curves
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